Product Summary

  • The MBRF20100CTG is a SWITCHMODE Schottky Power Rectifier. The MBRF20100CTG employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes.

Parametrics

MBRF20100CTG absolute maximum ratings: (1)Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage, VRRM, VRWM, VR: 100 V; (2)Average Rectified Forward Current, (Rated VR), TC = 133℃, Per device, IF(AV): 10 to 20A; (3)Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 133℃), IFRM: 20A; (4)Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz), IFSM: 150 A; (5)Peak Repetitive Reverse Surge Current (2.0μs, 1.0 kHz), IRRM: 0.5A; (6)Operating Junction and Storage Temperature, TJ, TSTG: -65 to +175℃; (7)Voltage Rate of Change (Rated VR), dv/dt: 10,000 V/μs; (8)RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25℃), Viso: 4500V.

Features

MBRF20100CTG features: (1)Highly Stable Oxide Passivated Junction; (2)Very Low Forward Voltage Drop; (3)Matched Dual Die Construction; (4)High Junction Temperature Capability; (5)High dv/dt Capability; (6)Excellent Ability to Withstand Reverse Avalanche Energy Transients; (7)Guardring for Stress Protection; (8)Epoxy Meets UL 94 V-0 @ 0.125 in; (9)Electrically Isolated No Isolation Hardware Required.; (10)Pb-Free Package is Available.

Diagrams

MBRF20100CTG circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MBRF20100CTG
MBRF20100CTG

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Data Sheet

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Data Sheet

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