(China (Mainland))
Product Summary
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The IRFP4232PBF is a HEXFET power MOSFET, which is specifically designed for sustain; energy recovery & pass switch applications in Plasma Display Panels. The IRFP4232PBF utilizes the latest processing techiques to achieve low on-resistance per silicon area and low EPULSE rating.
Parametrics
IRFP4232PBF absolute maximum ratings: (1)Gate-to-Source Voltage: ±20 V; (2)Gate-to-Source Voltage: ±30 V; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 60 A; (4)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 42 A; (5)Pulsed Drain Current: 240 A; (6)IRP @ TC = 100℃ Repetitive Peak Current: 117 A; (7)PD @TC = 25℃ Power Dissipation: 430 W; (8)PD @TC = 100℃ Power Dissipation: 210 W; (9)Linear Derating Factor: 2.9 W/℃; (10)Operating Junction and Storage Temperature Range: -40 to 175 ℃.
Features
IRFP4232PBF features: (1)Advanced process technology; (2)Key parameters optimized for PDP Sustain & Energy Recovery applications; (3)Low EPULSE rating to reduce the power dissipation in Sustain & ER applications; (4)Low QG for fast response; (5)High repetitive peak current capability for reliable operation; (6)Short fall & rise times for fast switching; (7)175℃ operating junction temperature for improved ruggedness; (8)Repetitive avalanche capability for robustness and reliability.
Diagrams
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 IRFP4232PBF |
International Rectifier |
MOSFET |
Data Sheet |
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