Product Summary
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The SPA11N60C3 is a cool MOS power transistor.
Parametrics
SPA11N60C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11A; TC = 100℃, ID: 7A; (2)Pulsed drain current, tp limited by Tjmax, IDpuls: 33A; (3)Avalanche energy, single pulse, ID = 5.5A, VDD = 50V, EAS: 340mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax2), ID = 11A, VDD = 50V, EAR: 0.6mj; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11A; (6)Gate source voltage, VGS: ±20 V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, TC = 25℃, Ptot: 33W; (9) Operating and storage temperature, Tj , Tstg: -55 to +150℃.
Features
SPA11N60C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)High peak current capability; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPA11N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 11A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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Data Sheet |
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Data Sheet |
Negotiable |
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Data Sheet |
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SPA101M0ER |
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SPA10AB |
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DIP Switches / SIP Switches Switch Sip Spst 10Pos R/A Unsld |
Data Sheet |
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SPA10B |
C&K Components |
DIP Switches / SIP Switches VERT PCB TH |
Data Sheet |
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