Product Summary

  • The IKW75N60T is an IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.


IKW75N60T maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)DC collector current, limited by Tjmax, IC: 80A at TC = 25℃; 75A at TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax, ICpuls: 225A; (4)Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175℃): 225A; (5)Diode forward current, limited by Tjmax, IF: 150A at TC = 25℃; 75A at TC = 100℃; (6)Diode pulsed current, tp limited by Tjmax, IFpuls: 225 A; (7)Gate-emitter voltage, VGE: ±20 V; (8)Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150℃, tSC: 5 μs; (9)Power dissipation TC = 25℃, Ptot: 428 W; (10)Operating junction temperature, Tj: -40 to +175℃; (11)Storage temperature, Tstg: -55 to +175℃; (12)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.


IKW75N60T features: (1)Very low VCE(sat) 1.5 V (typ.); (2)Maximum Junction Temperature 175 ℃; (3)Short circuit withstand time -5μs; (4)Designed for : Frequency Converters; Uninterrupted Power Supply; (5)Trench and Fieldstop technology for 600 V applications offers : very tight parameter distribution; high ruggedness, temperature stable behavior; very high switching speed; low VCE(sat); (6)Positive temperature coefficient in VCE(sat); (7)Low EMI; (8)Low Gate Charge; (9)Very soft, fast recovery anti-parallel EmCon HE diode; (10)Complete product spectrum and PSpice Models.


IKW75N60T circuit

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