(China (Mainland))
Product Summary
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The IRF1404PBF is a Seventh Generation HEXFET Power MOSFET from International Rectifier. The IRF1404PBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF1404PBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive. The TO-220 package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF1404PBF absolute maximum ratings: absolute maximum rarings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 202 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 143 A; (3)IDM Pulsed Drain Current: 808 A; (4)PD @TC = 25℃ Power Dissipation: 333 W; (5)Linear Derating Factor: 2.2 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 620 mJ; (8)IAR Avalanche Current: 82 A; (9)EAR Repetitive Avalanche Energy: 14 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 1.5 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 screw: 10 lbf·in(1.1 N·m).
Features
IRF1404PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Automotive Qualified (Q101); (8)Lead-Free.
Diagrams
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 IRF1404PBF |
International Rectifier |
MOSFET MOSFT 40V 162A 4mOhm 160nC |
Data Sheet |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
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Data Sheet |
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Data Sheet |
Negotiable |
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IRF1010ELPBF |
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Data Sheet |
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International Rectifier |
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