(China (Mainland))
Product Summary
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MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:25W ;RoHS Compliant: Yes
Parametrics
STP4NK60ZFP absolute maximum ratings: (1)Drain-source voltage (VGS = 0), VDS: 600 V; (2)Gate-source voltage, VGS: ±30 V; (3)Drain current (continuous) at TC = 25℃, ID: 4A; (4)Drain current (continuous) at TC = 100℃, ID: 2.5A; (5)Drain current (pulsed), IDM: 16A; (6)Total dissipation at TC = 25℃, PTOT: 25W; (7)Derating factor: 0.2 W/℃; (8)Gate source ESD(HBM-C = 100 pF, R = 1.5 kΩ), VESD(G-S): 3000V; (9)Peak diode recovery voltage slope, dv/dt: 4.5 V/ns; (10)Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s; TC = 25℃), VISO: 2500 V; (11)Storage temperature, Tstg: -65 to 150℃; (12)Max. operating junction temperature, Tj: 150℃.
Features
STP4NK60ZFP features: (1)100% avalanche tested; (2)Very low intrinsic capacitances.
Diagrams
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 STP4NK60ZFP |
STMicroelectronics |
MOSFET PowerMESH Zener SuperMESH |
Data Sheet |
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STP40N03L-20 |
Other |
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Data Sheet |
Negotiable |
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STP40N20 |
STMicroelectronics |
MOSFET N-Ch 200 Volt 40 Amp |
Data Sheet |
Negotiable |
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STP40NE03L-20 |
Other |
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Data Sheet |
Negotiable |
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STP40NF03L |
STMicroelectronics |
MOSFET N-Ch 30 Volt 40 Amp |
Data Sheet |
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STP40NF10 |
STMicroelectronics |
MOSFET N-Ch 100 Volt 50 Amp |
Data Sheet |
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STP40NF10L |
STMicroelectronics |
MOSFET N-Ch 100 Volt 40 Amp |
Data Sheet |
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