IRF3710PBF

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Price:: US $0.53~0.56 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10000 :	0.56 / Piece
10000 ~ 20000 :	0.53 / Piece

PartNumber:: IRF3710PBF

Brand:: International Rectifier - IR | D/C: 13+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-12-15

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Part Number:IRF3710PBF
US $0.53 - 0.56
Quantity:

piece

Product Summary

The IRF3710PBF is an Advanced HEXFET Power MOSFET from International Rectifier. The IRF3710PBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF3710PBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF3710PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 57 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 40 A; (3)Pulsed Drain Current, IDM: 230 A; (4)PD @TC = 25℃ Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Avalanche Current, IAR: 28 A; (8)Repetitive Avalanche Energy, EAR: 20 mJ; (9)Peak Diode Recovery dv/dt, dv/dt: 5.8 V/ns; (10)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (11)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF3710PBF features: (1)Advanced Process Technology; (2)Ultra low on-resistance; (3)Dynamic dv/dt ratings; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-free.