Product Summary

  • The IRF3710PBF is an Advanced HEXFET Power MOSFET from International Rectifier. The IRF3710PBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF3710PBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF3710PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 57 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 40 A; (3)Pulsed Drain Current, IDM: 230 A; (4)PD @TC = 25℃ Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Avalanche Current, IAR: 28 A; (8)Repetitive Avalanche Energy, EAR: 20 mJ; (9)Peak Diode Recovery dv/dt, dv/dt: 5.8 V/ns; (10)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (11)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF3710PBF features: (1)Advanced Process Technology; (2)Ultra low on-resistance; (3)Dynamic dv/dt ratings; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-free.

Diagrams

IRF3710PBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF3710PBF
IRF3710PBF

International Rectifier

MOSFET MOSFT 100V 57A 23mOhm 86.7nC

Data Sheet

0-1: $1.96
1-25: $1.27
25-100: $0.91
100-250: $0.86
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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Vishay/Dale

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Data Sheet

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Vishay/Dale

Power Inductors 5.6uH 10%

Data Sheet

0-1: $0.30
1-2000: $0.15
2000-4000: $0.14
4000-10000: $0.14
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