Product Summary

  • General Description:These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
    planar stripe,  DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
    avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts
    based on half bridge topology

Parametrics

Absolute Maximum Ratings
VDSS Drain-Source Voltage 500 V
ID Drain Current  - Continuous (TC = 25°C) 13 13 * A
- Continuous (TC = 100°C) 8 8  * A
IDM Drain Current - Pulsed (Note 1) 52 52 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 860 mJ
IAR Avalanche Current (Note 1) 13 A
EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 195 48 W
- Derate above 25°C 1.56 0.39 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300℃

Features

Features
13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
Low gate charge ( typical  43 nC)
Low Crss ( typical  20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

Diagrams

FQPF13N50C

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