(China (Mainland))
Product Summary
-
General Description:These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts
based on half bridge topology
Parametrics
Absolute Maximum Ratings
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 13 13 * A
- Continuous (TC = 100°C) 8 8 * A
IDM Drain Current - Pulsed (Note 1) 52 52 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 860 mJ
IAR Avalanche Current (Note 1) 13 A
EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 195 48 W
- Derate above 25°C 1.56 0.39 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300℃
Features
Features
13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
Low gate charge ( typical 43 nC)
Low Crss ( typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Diagrams
FQPF13N50C
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQPF13N50C |
Fairchild Semiconductor |
MOSFET 500V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
|
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|
FQPF13N50CF |
Fairchild Semiconductor |
MOSFET HIGH_VOLTAGE |
Data Sheet |
|
|
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|
FQPF13N50CT |
Fairchild Semiconductor |
MOSFET N-CH/500V/13A QFET C-Series |
Data Sheet |
Negotiable |
|
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|
FQPF13N50CSDTU |
Fairchild Semiconductor |
MOSFET 60V N-Channel QFET |
Data Sheet |
Negotiable |
|
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