(China (Mainland))
Product Summary
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The FQPF5N60C is a N-Channel enhancement mode power field effect transistor which is produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current: Continuous (TC = 25℃): 4.5 * A, Continuous (TC = 100℃): 2.6 * A; (3)Drain Current - Pulsed: 18 * A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 210 mJ; (6)Avalanche Current: 4.5 A; (7)Repetitive Avalanche Energy: 10 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 33 W, Derate above 25℃: 0.26 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃.
Features
Features: (1)4.5A, 600V, RDS(on) = 2.5Ω@VGS = 10 V; (2)Low gate charge ( typical 15 nC); (3)Low Crss ( typical 6.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF5N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQPF5N60CYDTU |
Fairchild Semiconductor |
MOSFET N-CH/600 /5A/CFET |
Data Sheet |
Negotiable |
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