(China (Mainland))
Product Summary
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The EP1C12F324C8N is a field programmable gate array. It is based on a 1.5-V, 0.13μm, all-layer copper SRAM process, with densities up to 20,060 logic elements (LEs) and up to 288 Kbits of RAM.
Parametrics
Absolute maximum ratings: (1)DC input voltage:-0.5V to 4.6V; (2)DC output current, per pin:–25mA to 25mA; (3)Storage temperature No bias:–65℃ to 150℃; (4)Ambient temperature Under bias:–65℃ to 135℃; (5)Junction temperature BGA packages under bias:135℃.
Features
Features: (1)2,910 to 20,060 LEs; (2)Up to 294,912 RAM bits (36,864 bytes); (3)Supports configuration through low-cost serial configuration device; (4)Support for LVTTL, LVCMOS, SSTL-2, and SSTL-3 I/O standards; (5)Support for 66-MHz, 32-bit PCI standard; (6)Low speed (311 Mbps) LVDS I/O support; (7)Up to two PLLs per device provide clock multiplication and phase shifting.
Diagrams
EP1C12F324C8N
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 EP1C12F324C8N |
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IC CYCLONE FPGA 12K LE 324-FBGA |
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EP1C12 |
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Negotiable |
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EP1C12F256C6 |
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IC CYCLONE FPGA 12K LE 256-FBGA |
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EP1C12F256C6N |
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IC CYCLONE FPGA 12K LE 256-FBGA |
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EP1C12F256C7 |
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IC CYCLONE FPGA 12K LE 256-FBGA |
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EP1C12F256C7N |
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IC CYCLONE FPGA 12K LE 256-FBGA |
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EP1C12F256C8 |
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IC CYCLONE FPGA 12K LE 256-FBGA |
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