Product Summary
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The IRFP264 HEXFET power MOSFET from international rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package of IRFP264 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP264 also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Parametrics
IRFP264 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current,VGS @ 10V: 38 A; (2)ID@TC=100℃, continuous drain current,VGS @ 10V: 24 A; (3)IDM, pulsed drain current: 150 A; (4)PD@TC=25℃, power dissipation: 280 W; (5)linear dersting factor: 2.2 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 1000 mJ; (8)avalanche current: 38 A; (9)repetitive avalanche energy: 28 mJ; (10)peak diode recovery dv/dt: 4.8 V/ns; (11)junction and storage temperature range: -55 to +150 ℃; (12)soldering temperature, for 10 seconds: 300 ℃ (1.6mm from case).
Features
IRFP264 features: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)isolated central mounting hole; (4)fast switching; (5)east of paralleling; (6)simple drive requirements.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP264PBF |
Vishay/Siliconix |
MOSFET N-Chan 250V 38 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFP044 |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP044, SiHFP044 |
Other |
Data Sheet |
Negotiable |
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IRFP044N |
MOSFET N-CH 55V 53A TO-247AC |
Data Sheet |
Negotiable |
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IRFP044NPBF |
International Rectifier |
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
Data Sheet |
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IRFP044PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP048 |
Vishay/Siliconix |
MOSFET N-Chan 60V 70 Amp |
Data Sheet |
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